| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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LZG |
SILICON PNP TRANSISTOR Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -500 mA IB -100 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical |
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LZG |
SILICON PNP TRANSISTOR High fT, complementary pair with 2SC5171(3DA5171). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC(Ta=25℃) PC(Tc=25℃) Tj Tstg -180 -180 -5.0 -2.0 -1.0 2.0 20 150 -55～150 V V V A A W W ℃ ℃ /Electrical characterist |
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LZG |
SILICON PNP TRANSISTOR High VCEO, Complementary pair with 2SC1473(3DG1473). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -250 V VCEO -200 V VEBO -5.0 V IC -70 mA ICP -100 mA PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characterist |
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LZG |
SILICON PNP TRANSISTOR High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta |
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LZG |
SILICON PNP TRANSISTOR High hFE, complementary pair with 2SC5344S(3DG5344M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) S |
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LZG |
SILICON PNP TRANSISTOR Large IC,low VCE(sat),complementary pair with the 2SC5342S(3DG5342S). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristi |
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LZG |
SILICON PNP TRANSISTOR Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25 |
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LZG |
SILICON PNP TRANSISTOR |
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LZG |
SILICON PNP TRANSISTOR |
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LZG |
SILICON PNP TRANSISTOR High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -6.0 V IC -1.0 A ICP -2.0 A PC 500 mW Tj 150 ℃ Tstg -55～150 ℃ /El |
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LZG |
SILICON PNP TRANSISTOR High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg -200 -200 -5.0 -100 -200 1.0 150 -55～150 V V V mA mA |
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LZG |
SILICON PNP TRANSISTOR Low VCE(sat),low output capacitance, complementary pair with 2SC5343(3DG5343). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5.0 -150 625 150 -55～150 V V V mA mW ℃ ℃ /Electrical characteristics(Ta |
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LZG |
SILICON PNP TRANSISTOR High hFE, complementary pair with 2SC5344(3DG5344). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Sym |
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LZG |
SILICON PNP TRANSISTOR Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -500 mA ICP -1.0 A PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Sy |
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LZG |
SILICON PNP TRANSISTOR High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IE |
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LZG |
SILICON PNP TRANSISTOR High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 600 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta |
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LZG |
SILICON PNP TRANSISTOR High hFE and excellent hFE linearity. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -150 mA IB -20 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol |
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LZG |
SILICON PNP TRANSISTOR High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg -300 -300 -5.0 -100 -200 1.0 150 -55～150 V V V mA mA |
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LZG |
SILICON PNP TRANSISTOR High VCEO, small ICBO and VCE(sat). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -180 V VCEO -160 V VEBO -6.0 V IC -1.5 A PC(Ta=25℃) 1.5 W PC(Tc=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta= |
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LZG |
SILICON PNP TRANSISTOR .Large Ic low Vce(sat),complementary pair with the 2SC2411K(3DG2411K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characterist |
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Desde 2024. D4U Semiconductor.
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