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2SA719 Silicon PNP Transistor

2SA719


2SA719
Part Number 2SA719
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2SA719

LGE
2SA719
Part Number 2SA719
Manufacturer LGE
Title Bipolar Transistors
Description 2SA719/2SA720(PNP) TO-92 Bipolar Transistors 1. EMITTER 2. COLLECTOR 3. BASE TO-92 Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage 2SA719 2SA720 VCEO Collector-Emitter Volta.
Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage 2SA719 2SA720 VCEO Collector-Emitter Voltage 2SA719 2SA720 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value -30 -60 -25 -50 -5 -500 62.

2SA719

LZG
2SA719
Part Number 2SA719
Manufacturer LZG
Title SILICON PNP TRANSISTOR
Description 2SA719(3CG719) PNP /SILICON PNP TRANSISTOR :/Purpose:AF output amplifier and driver. : 2SC1317(3DG1317)/Features:Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -500 mA ICP -1.0 A PC 625 mW .
Features Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -500 mA ICP -1.0 A PC 625 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical Characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test Condition IC=-10μA IC=-10mA IE=-10μA VCB=-20V VCE=-10V VCE=-10V IC=-300mA IC=-.

2SA719

BLUE ROCKET ELECTRONICS
2SA719
Part Number 2SA719
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon PNP transistor
Description TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features 2SC1317 。 Complementary pair with 2SC1317.. / Applications 。 AF output amplifier and driver. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE .
Features 2SC1317 。 Complementary pair with 2SC1317.. / Applications 。 AF output amplifier and driver. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 85~170 R 120~240 S 170~340 http://www.fsbrec.com 1/6 2SA719 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to B.

2SA719

SeCoS
2SA719
Part Number 2SA719
Manufacturer SeCoS
Title PNP Transistor
Description Elektronische Bauelemente 2SA719 -0.5 A, -30 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  For low-frequency power amplification and driver amplification. G H CLASSIFICATION OF hFE Product-Rank 2SA719-Q 2SA719-R Range 8.
Features
 For low-frequency power amplification and driver amplification. G H CLASSIFICATION OF hFE Product-Rank 2SA719-Q 2SA719-R Range 85~170 120~240 2SA719-S 170~340 J AD B K E CF TO-92 Emitter Collector
Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76
 Base ABSOLUTE MAXIMUM R.

2SA719

JCET
2SA719
Part Number 2SA719
Manufacturer JCET
Title PNP Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA719/2SA720 TRANSISTOR (PNP) TO-92 FEATURES For Low-Frequency Power Amplification and Driver Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Co.
Features For Low-Frequency Power Amplification and Driver Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage 2SA719 2SA720 Collector-Emitter Voltage 2SA719 2SA720 Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -60 -25 -50 -5 -500 625 150 -55-.

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