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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
30V P-Channel MOSFET -20 -44 97 83 33 6.25 4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 D S Units |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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Kexin |
Schottky Diodes ● Surface Mount Fast Recovery Rectifiers ● Reverse Voltage - 20 to 200 V ● Forward Current :2 A ● Low power loss, high efficiency SMAF 1 Diodes 2 1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS |
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KEXIN |
Diodes Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6 (Typ.) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute M axim um R atings Ta = 25 Param eter R everse V oltage Forward Current Junctio |
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Kexin |
Schottky Barrier Rectifier ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Desde 2024. D4U Semiconductor.
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