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SISS27DN-T1-GE3 |
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| Part Number | SISS27DN-T1-GE3 |
| Manufacturer | Kexin |
| Description | Product Summary The SISS27DN uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. • RoHS and H... |
| Features |
-20 -44 97 83 33 6.25 4
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 16 45 1.1
Max 20 55 1.5
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
SMD Type
MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V VDS=-30V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage current Ga... |
| Document |
 SISS27DN-T1-GE3 Data Sheet
PDF 582.61KB |
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