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KIA |
N-CHANNEL MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A RDS(ON)= |
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KIA |
N-CHANNEL MOSFET RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free |
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KIA |
N-CHANNEL MOSFET RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free |
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KIA |
N-CHANNEL MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A RDS(ON)= |
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Desde 2024. D4U Semiconductor.
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