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50N06 |
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| Part Number | 50N06 |
| Manufacturer | KIA |
| Description | The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltage... |
| Features |
RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
Function Gate Drain Source
1 of 9
Free Datasheet http://www.datasheet4u.com/
KIA
50 Amps, 60 Volts N-CHANNEL MOSFET
50N06
SEMICONDUCTORS
6. Absolute maximum ratings
Parameter Drain to source voltage Gate to source voltage TJ=25 ºCID50A Continuous drain current TJ=100 ºCID35A Drain current pulsed (note1)IDM200A Single pulsed avalanche energy (note2)EAS480mJ Repetitive avalanche ene... |
| Document |
 50N06 Data Sheet
PDF 848.72KB |
Similar Datasheet
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| 1 | 50N02-09 |
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| 2 | 50N024 |
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| 3 | 50N02409PU54A |
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| 4 | 50N025-05P |
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| 5 | 50N03 |
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| 6 | 50N03 |
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N-CHANNEL MOSFET |
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Desde 2024. D4U Semiconductor.
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