No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Jiangsu Changjiang |
TO-251 Plastic Encapsulate Transistors Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL C |
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