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3CD3001 |
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| Part Number | 3CD3001 |
| Manufacturer | Jiangsu Changjiang |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO... |
| Features |
Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3EMITTER
TRANSISTOR (NPN)
TO-251
Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation... |
| Document |
 3CD3001 Data Sheet
PDF 31.96KB |
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