| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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JIANGSU CHANGJIANG |
NPN Transistor z High DC Current Gain z Complementary to 2SA950 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-B |
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JIANGSU CHANGJIANG |
NPN Transistor z High DC Current Gain 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power D |
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JIANGSU CHANGJIANG |
NPN Transistor z High DC Current Gain z Complementary to 2SA950 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-B |
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JIANGSU CHANGJIANG |
NPN Transistor z High DC Current Gain 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power D |
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Desde 2024. D4U Semiconductor.
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