Intersil HA- Hoja de datos

No.	parte #	Fabricante	Descripción
1	20N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
2	HS7-1100RH-Q	Intersil Corporation	Radiation Hardened/ Ultra High Speed Current Feedback Amplifier • Electrically Screened to SMD # 5962-94676 • QML Qualiﬁed per MIL-PRF-38535 Requirements • Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ) • Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ) • Very High Slew Rate . .
3	ACTS573T	Intersil Corporation	Radiation Hardened Octal Three-State Transparent Latch
4	HA5022	Intersil Corporation	Dual/ 125MHz/ Video Current Feedback Amplifier wide bandwidth and high slew rate, and is optimized for video applications and gains between 1 and 10. It is a current feedback ampliﬁer and thus yields less bandwidth degradation at high closed loop gains than voltage feedback ampliﬁers. The low dif
5	JANSR2N7398	Intersil Corporation	2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET • 2A, 500V, rDS(ON) = 2.50Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of
6	HA2841	Intersil Corporation	Window Comparator With Independent Adjustments the input signal to the trip voltage developed by RT. The window width voltage RW is summed into the output of the op amp as an offset voltage. The op amp has two feedback loops each of which contains a steering diode, D1 or D2. The high open loop g
7	2N5905	Intersil Corporation	monolithic dual n-channel JFET
8	HA-2522	Intersil Corporation	20MHz/ High Slew Rate/ Uncompensated/ High Input Impedance/ Operational Amplifiers • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . 120V/µs • Fast Settling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200ns • Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . 2MHz • Gain Bandw
9	2N5517	Intersil Corporation	DUAL N-CHANNEL JFET
10	HGTP7N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
11	HCTS299MS	Intersil Corporation	Radiation Hardened 8-Bit Universal Shift Register • • • • • • • • • • • • 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose R
12	IRF614	Intersil Corporation	N-Channel Power MOSFET • 2.0A, 250V • rDS(ON) = 2.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surfa
13	IRFP460	Intersil Corporation	N-Channel Power MOSFET • 20A, 500V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf
14	HA3-5142-5	Intersil Corporation	Dual/ 400kHz/ Ultra-Low Power Operational Amplifier • Low Supply Current . . . . . . . . . . . . . . . . . . . . . 45µA/Amp • Wide Supply Voltage Range Single . . . . . . . . . 3V to 30V - or Dual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±1.5V to ±15V • High Slew Rate. . . . . . . .
15	2N5516	Intersil Corporation	DUAL N-CHANNEL JFET
16	2N5904	Intersil Corporation	monolithic dual n-channel JFET
17	HGTG30N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide
18	HGTP3N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
19	BUZ11	Intersil Corporation	N-Channel Power MOSFET • 30A, 50V • rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Com
20	IS-1845ASEH	Intersil	Single Event Radiation Hardened High Speed Current Mode PWM • Electrically Screened to DSCC SMD # 5962-01509 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - High Dose Rate. . . . . . . . . . . . . . . . . . . . .300 krad(SI) (Max) - Low Dose Rate . . . . . . . . . . . . . . . . . . .