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HGTG30N60B3 |
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| Part Number | HGTG30N60B3 |
| Manufacturer | Intersil Corporation |
| Description | HGTG30N60B3 Data Sheet January 2000 File Number 4444.2 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bip... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49170.
Features
• 60A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . ... |
| Document |
 HGTG30N60B3 Data Sheet
PDF 105.23KB |
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