Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
HGTG30N60B3D |
| Part Number | HGTG30N60B3D |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high volt. |
HGTG30N60B3D |
| Part Number | HGTG30N60B3D |
| Manufacturer | ON Semiconductor |
| Title | N-Channel IGBT |
| Description | UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction los. |
| Features | of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti−parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGTG30N60B3 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | HGTG30N60B3 |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG30N60B3 |
ON Semiconductor |
IGBT |
|
| 4 | HGTG30N60 |
Fairchild Semiconductor |
600V Planar IGBT Chip |
|
| 5 | HGTG30N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 6 | HGTG30N60A4 |
Intersil Corporation |
N-Channel IGBT |
|
| 7 | HGTG30N60A4 |
ON Semiconductor |
SMPS IGBT |
|
| 8 | HGTG30N60A4D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 9 | HGTG30N60A4D |
Intersil Corporation |
N-Channel IGBT |
|
| 10 | HGTG30N60A4D |
ON Semiconductor |
N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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