Intersil Corporation G30 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HGTG30N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide
2	HGTG30N60B3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i
3	DG308A	Intersil Corporation	Quad Monolithic SPST / CMOS Analog Switch • Low Power Consumption • CMOS Compatible • ±15V Analog Signal Range • Single or Dual Supply Capability • Alternate Source Functional Diagram DG308A Ordering Information PART NUMBER DG308ACJ DG308ACY TEMP. RANGE (oC) 0 to 70 0 to 70 PACKAGE 16 Ld P
4	HGTG30N120CN	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
5	RURG30100	Intersil Corporation	30A/ 1000V Ultrafast Diode • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <110ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V • Avalanche Energy Rate
6	RURG30100CC	Intersil Corporation	30A/ 700V - 1000V Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <110ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . 1000V • Avalanche Energy Rated • Planar C
7	RURG3020CC	Intersil Corporation	Ultrafast Dual Diode • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <45ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V • Avalanche Energy Ra
8	RURG3040	Intersil Corporation	Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated
9	RURG3040CC	Intersil Corporation	Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated
10	RHRG3060CC	Intersil Corporation	30A/ 400V - 600V Hyperfast Dual Diodes • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <40ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated •
11	HGTG30N120D2	Intersil Corporation	N-Channel IGBT • 30A, 1200V • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. Th
12	HGTG30N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is idea
13	HGTG30N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is
14	RURG3060CC	Intersil Corporation	30A/ 400V - 600V Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated
15	RURG3070CC	Intersil Corporation	30A/ 700V - 1000V Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <110ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . 1000V • Avalanche Energy Rated • Planar C
16	RURG3080CC	Intersil Corporation	30A/ 700V - 1000V Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <110ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . 1000V • Avalanche Energy Rated • Planar C
17	RURG3090CC	Intersil Corporation	30A/ 700V - 1000V Ultrafast Dual Diodes • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <110ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . 1000V • Avalanche Energy Rated • Planar C
18	DG300A	Intersil Corporation	TTL-Compatible / CMOS Analog Switches include Break-Before-Make switching, TTL and CMOS compatibility, and low ON resistance. Single supply operation (for positive switch voltages) is possible by connecting V- to 0V. Features • Low Power Consumption • Break-Before-Make Switching - tON .
19	DG300ABK	Intersil Corporation	TTL-Compatible / CMOS Analog Switches include Break-Before-Make switching, TTL and CMOS compatibility, and low ON resistance. Single supply operation (for positive switch voltages) is possible by connecting V- to 0V. Features • Low Power Consumption • Break-Before-Make Switching - tON .
20	DG303A	Intersil Corporation	TTL-Compatible / CMOS Analog Switches include Break-Before-Make switching, TTL and CMOS compatibility, and low ON resistance. Single supply operation (for positive switch voltages) is possible by connecting V- to 0V. Features • Low Power Consumption • Break-Before-Make Switching - tON .