| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
Power MOSFET y Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient Max. 30 ±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150 Max. 50 Units V A W W/°C mJ V °C Units °C/W 1 1/ |
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International Rectifier |
Power MOSFET r Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20 - |
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International Rectifier |
HEXFET Power MOSFET PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junctio |
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International Rectifier |
Power MOSFET Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient Max. 30 ±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150 Max. 50 Units V A W W/°C mJ V °C |
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International Rectifier |
Power MOSFET Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20 -55 to + 150 |
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International Rectifier |
Power MOSFET TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range |
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Desde 2024. D4U Semiconductor.
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