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Si4420DY |
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| Part Number | Si4420DY |
| Manufacturer | International Rectifier |
| Description | This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this... |
| Features |
y Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter Maximum Junction-to-Ambient
Max. 30
±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150
Max. 50
Units V
A
W W/°C
mJ V °C
Units °C/W
1
1/3/2000
Si4420DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 – – – – – – V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient – – – 0.028 – – – V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resist... |
| Document |
 Si4420DY Data Sheet
PDF 107.40KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI4420DY |
NXP |
N-channel FET |
|
| 2 | Si4420DY |
Fairchild Semiconductor |
Single N-Channel MOSFET |
|
| 3 | Si4420DYPbF |
International Rectifier |
Power MOSFET |
|
| 4 | SI4421 |
Silicon Labs |
Universal ISM Band FSK Transceiver |
|
| 5 | SI4421DY |
Vishay Siliconix |
P-Channel MOSFET |
|
| 6 | SI4423DY |
Vishay Siliconix |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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