No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
Schottky Die |
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International Rectifier |
Schottky Die |
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International Rectifier |
Schottky Die . IR @ 25°C (mA) 8 2 2 2 0.55 (*) Max. VF @ IF (V) 0.42 V @ 40A per die, TJ= 25°C 0.46V @ 30A per die, TJ= 25°C 0.51 V @ 20A per die, TJ= 25°C 0.54V @ 15A per die, TJ= 25°C 0.69 V @ 10A per die, TJ= 25°C (*) For reference only, VF do not include vol |
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International Rectifier |
Schottky Die |
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International Rectifier |
Schottky Die |
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International Rectifier |
PDP Trench IGBT l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package Key |
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