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IRG7SC28UPbF |
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| Part Number | IRG7SC28UPbF |
| Manufacturer | International Rectifier |
| Description | This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which... |
| Features |
l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency l High repetitive peak current capability l Lead Free package
Key Parameters
VCE min
600
cVCE(ON) typ. @ IC = 40A
IRP max @ TC= 25°C TJ max
1.70 225 150
CC
V V A °C
G
E
n-channel
G Gate
CE G
D2Pak IRG7SC28UPbF
C Collector
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low... |
| Document |
 IRG7SC28UPbF Data Sheet
PDF 208.32KB |
Similar Datasheet
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| 2 | IRG7S313U |
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| 3 | IRG7S313UPBF |
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| 4 | IRG7S319UPBF |
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| 6 | IRG7I313UPBF |
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|
Desde 2024. D4U Semiconductor.
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