| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
IGBT PIM MODULE • • • • Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10μs Short Circuit Capability Square RBSOA VCES = 600V IC = 27A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.04V • HEXFRED Antiparallel Diode with Ultrasoft Reverse |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, |
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Desde 2024. D4U Semiconductor.
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