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IRGB30B60K |
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| Part Number | IRGB30B60K |
| Manufacturer | International Rectifier |
| Description | PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs S... |
| Features |
• • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K www.DataSheet4U.com D2 Pak IRGS30B60K TO-262 IRGSL30B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-t... |
| Document |
 IRGB30B60K Data Sheet
PDF 354.36KB |
Similar Datasheet
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| 1 | IRGB30B60KPBF |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | IRGB10B60KD |
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| 3 | IRGB10B60KDPBF |
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| 4 | IRGB14C40L |
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| 5 | IRGB14C40LPBF |
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| 6 | IRGB15B60KD |
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Desde 2024. D4U Semiconductor.
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