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International Rectifier |
IRF9530N C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current |
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International Rectifier |
IRF9540N D @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Curre |
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International Rectifier |
Power MOSFET NE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" No |
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International Rectifier |
Power MOSFET AR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanc |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC |
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International Rectifier |
Power MOSFET l l l l l l l l AUIRF9540N D Advanced Planar Technology Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS RDS(on) |
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International Rectifier |
Power MOSFET ipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile applications. D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 2 |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET AR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanc |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INTE RNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WE EK 19 LINE C OR INT ERNAT IONAL RECT IF IER LOGO ASSEMBLY LOT CODE PART NUM |
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International Rectifier |
HEXFET Power MOSFET ote: "P" in as s embly line pos ition indicates "Lead-Free" INTE RNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WE EK 19 LINE C OR INT ERNAT IONAL RECT IF IER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE P = DES |
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International Rectifier |
HEXFET Power MOSFET ote: "P" in as s embly line pos ition indicates "Lead-Free" INTE RNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WE EK 19 LINE C OR INT ERNAT IONAL RECT IF IER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE P = DES |
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International Rectifier |
IRF9520N AR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanc |
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International Rectifier |
Power MOSFET ipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile applications. D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 2 |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9540L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = |
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International Rectifier |
Power MOSFET HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INTE RNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WE EK 19 LINE C OR INT ERNAT IONAL RECT IF IER LOGO ASSEMBLY LOT CODE PART NUM |
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International Rectifier |
HEXFET POWER MOSFET = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A |
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Desde 2024. D4U Semiconductor.
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