International Rectifier AN- Hoja de datos

No.	parte #	Fabricante	Descripción
1	IRF840	International Rectifier	N-Channel Power MOSFET
2	IR2110	International Rectifier	HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Sepa
3	UGFZ15A	First Components International	1.5 Amp Glass Passivated Sintered Ultra - Fast Rectifiers Mechanical Dimensions n LOWEST COST FOR GLASS SINTERED ULTRA - FAST CONSTRUCTION n LOWEST VF FOR GLASS SINTERED ULTRA - FAST CONSTRUCTION n TYPICAL IR < 100 nAmps UGFZ15A . . . 15GSeries 15A 50 35 50 15B 100 70 100 15D 200 140 200 15G 400 280 400 Volts Volts Volts Amps Am
4	UF208	Pan Jit International	ULTRAFAST SWITCHING RECTIFIER l Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound l Void-free Plastic in DO-15 package l 2.0 ampere operation at TA=55 ¢J with no thermal runaway l l Exceeds environmental
5	IR2110E6	International Rectifier	HIGH AND LOW SIDE DRIVER n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5
6	IR2113S	International Rectifier	HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compa
7	IR2110S	International Rectifier	HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compa
8	G4PC30F	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio
9	SKBAB500C1000	Semikron International	Avalanche Bridge Rectifiers • Compact plastic package with in-line terminals • High blocking voltage • SKBa with avalanche characteristics Typical Applications • Internal power supplies for electronic equipment • DC power supplies • Control equipment • TV sets • Avalanche types
10	IR2101	International Rectifier	HIGH AND LOW-SIDE DRIVER Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V VOFFSET 600V max. Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • 3.3V, 5V, and
11	IRGP4063DPBF	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fas
12	85HF80	International Rectifier	STANDARD RECOVERY DIODES High surge current capability Stud cathode and stud anode version Leaded version available Types up to 1600V VRRM 85 A Typical Applications Battery charges Converters Power supplies Machine tool controls Welding Major Ratings and Characteristics 8
13	IR2110PBF	International Rectifier	HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Sepa
14	IRF150	International Rectifier	N-Channel Power MOSFET n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR E
15	IRF3205L	International Rectifier	N-Channel Power MOSFET available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Pow
16	IRGP4062DPBF	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft R
17	IRLB3034PBF	International Rectifier	40V Single N-Channel HEXFET Power MOSFET imited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or
18	300HF120	International Rectifier	STANDARD RECOVERY DIODES High current carrying capability High surge current capability Types up to 1200V VRRM Stud cathode and stud anode version Standard JEDEC types Diffused junction RoHS Compliant Typical Applications Battery chargers Converters Power supplies Machine to
19	303U250P5	International Rectifier	STANDARD RECOVERY DIODES Wide current range High voltage ratings up to 2500V High surge current capabilities Stud cathode and stud anode version 300A Typical Applications Converters Power supplies Machine tool controls High power drives Medium traction applications Major
20	IR21064PBF	International Rectifier	HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V (IR2106(4)) • Undervoltage lockout for both channels • 3.3V, 5V an