| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
International Rectifier |
Power MOSFET l l l Two Transistor Forward Half Bridge, Full Bridge PFC Boost through are on page 8 Notes www.irf.com 1 6/23/99 IRFP450A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Bre |
|
|
|
|
International Rectifier |
Triac / T-Modules |
|
|
|
|
International Rectifier |
(COM150A - COM450A) Power MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military req |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
|
|
|
International Rectifier |
Triac / T-Modules |
|
|
|
|
International Rectifier |
(COM150A - COM450A) Power MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military req |
|
|
|
|
International Rectifier |
Triac / T-Modules |
|
|
|
|
International Rectifier |
Power MOSFET ical SMPS Topologies: l Two Transistor Forward l Half Bridge, Full Bridge l PFC Boost Notes through are on page 8 www.irf.com 1 2/26/04 IRFP450APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
|
|
|
International Rectifier |
(COM150A - COM450A) Power MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military req |
|
|
|
|
International Rectifier |
SMPS MOSFET on Boost Notes through are on page 8 www.irf.com 1 12/15/99 IRFP22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Co |
|
|
|
|
International Rectifier |
Triac / T-Modules |
|
|
|
|
International Rectifier |
STANDARD RECOVERY DIODES Alloy diode High current carrying capability High voltage ratings up to 1000V High surge current capabilities Stud cathode and stud anode version 150A Typical Applications Converters Power supplies Machine tool controls High power drives Medium tra |
|
|
|
|
International Rectifier |
Power MOSFET l PFC Boost Notes through are on page 8 www.irf.com 1 6/23/99 IRFPC50A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 – – – – – – V VGS = 0V, ID = 250 |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The 89CNQ...A center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical applications ar |
|
|
|
|
International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
|
Desde 2024. D4U Semiconductor.
|