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IRFP450A International Rectifier Power MOSFET Datasheet

IRFP450APBF MOSFETs TO247 500V 14A N-CH MOSFET


International Rectifier
IRFP450A
Part Number IRFP450A
Manufacturer International Rectifier
Description PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characte...
Features l l l Two Transistor Forward Half Bridge, Full Bridge PFC Boost through … are on page 8 Notes  www.irf.com 1 6/23/99 IRFP450A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
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  – RDS(on) Static Drain-to-Source On-Resistance
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  – VGS(th) Gate Threshold Voltage 2.0
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  – IDSS Drain-to-Source Leakage Current
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  – Gate-to-Source Forward Leakage
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  – IGSS Gate-to-Source Reverse Leakage
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  – V(BR)DSS Typ.
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  – 0.58
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  – Max. Units Conditions
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  – V VGS = 0V, ID = 250µA
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  – V/°C Refe...

Document Datasheet IRFP450A datasheet pdf (101.62KB)
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Mouser Electronics
Stock 2046 In Stock
Price
1 units: 3.5 USD
10 units: 3.12 USD
25 units: 2.68 USD
100 units: 2.38 USD
250 units: 2.29 USD
500 units: 2.15 USD
2500 units: 2.04 USD
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IRFP450A Distributor

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Vishay Intertechnologies
IRFP450APBF
MOSFET,N CH,W DIODE,500V,14A,TO-247AC
1000 units: 2901 KRW
500 units: 2960 KRW
100 units: 3097 KRW
10 units: 3689 KRW
1 units: 4679 KRW
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element14 Asia-Pacific

1973 In Stock
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Vishay Siliconix
IRFP450A
N채널 500V 14A(Tc) 190W(Tc) 스루홀 TO-247AC
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DigiKey

0 In Stock
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part
Vishay Intertechnologies
IRFP450APBF
MOSFETs TO247 500V 14A N-CH MOSFET
1 units: 3.5 USD
10 units: 3.12 USD
25 units: 2.68 USD
100 units: 2.38 USD
250 units: 2.29 USD
500 units: 2.15 USD
2500 units: 2.04 USD
Distributor
Mouser Electronics

2046 In Stock
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part
Vishay Intertechnologies
IRFP450APBF
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AC
2500 units: 1.4266 USD
500 units: 1.4411 USD
250 units: 1.8632 USD
100 units: 1.864 USD
25 units: 2.0904 USD
10 units: 2.4307 USD
1 units: 2.6174 USD
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Arrow Electronics

793 In Stock
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Vishay Intertechnologies
IRFP450APBF
MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 0.4Ohm, ID 14A, TO-247AC, PD 190W, VGS +/-30V | Vishay PCS IRFP450APBF
1 units: 3.43 USD
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20 units: 2.75 USD
100 units: 2.58 USD
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RS

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Vishay Intertechnologies
IRFP450APBF
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AC
4 units: 2.422 USD
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Verical

120 In Stock
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part
Vishay Intertechnologies
IRFP450APBF
MOSFETs TO247 500V 14A N-CH MOSFET
25 units: 1.98 USD
50 units: 1.94 USD
100 units: 1.9 USD
250 units: 1.86 USD
400 units: 1.82 USD
500 units: 1.79 USD
1000 units: 1.75 USD
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International Rectifier
IRFP450A
MOSFET Transistor, N-Channel, TO-247VAR
109 units: 1.599 USD
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Quest Components

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Vishay Intertechnologies
IRFP450APBF
Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
250 units: 1.81 USD
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25 units: 2.43 USD
1 units: 2.97 USD
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Vishay Intertechnologies
IRFP450APBF
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IRFP450A Similar Datasheet

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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 180 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.7 30 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transisto...
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 190 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.65 40 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCH...
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