| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER 30 Amp Units A V V This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are i |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER Units A This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in sw |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The 30LJQ045 Schottky rectifier has been expressly designed to meet the rigorous requirements of high relibility environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse leakage |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 30Apk, TJ =125°C 1N7038U3 30 150 140 0.92 Units A V A V The 1N7038U3 Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. I |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER Units A This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in sw |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER Units A This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in sw |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The 30LJQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse leakage current |
|
|
|
|
International Rectifier |
Power MOSFET in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. D 2 P ak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS I |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, bat |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, bat |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The STPS30L60CW center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in |
|
|
|
|
International Rectifier |
Power MOSFET ough are on page 10 www.irf.com 1 5/4/00 IRFBC30AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient – – – RDS(on) Static Drain-to-Source On-Res |
|
|
|
|
International Rectifier |
SMPS MOSFET yback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). through are on page 10 Notes www.irf.com 1 5/8/00 IRF730AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR) |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET g Junction and Storage Temperature Range c d Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greas |
|
|
|
|
International Rectifier |
STANDARD RECOVERY DIODES Wide current range High voltage ratings up to 4500V High surge current capabilities Diffused junction Hockey Puk version Case style DO-200AB (B-PUK) Typical Applications Converters Power supplies High power drives Auxiliary system supplies for tract |
|
|
|
|
International Rectifier |
STANDARD RECOVERY DIODE Wide current range High voltage ratings up to 3000V High surge current capabilities Diffused junction Hockey Puk version Case style DO-200AB (B-PUK) Typical Applications Converters Power supplies Machine tool controls High power drives Medium tracti |
|
Desde 2024. D4U Semiconductor.
|