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IRF530L |
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| Part Number | IRF530L |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications.
D 2 P ak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current •9.0 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temper... |
| Document |
 IRF530L Data Sheet
PDF 178.57KB |
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