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Infineon Technologies |
SPP17N80C3 • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
SPP11N65C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID P-TO262-3-1 P-TO220-3-31 650 0.38 11 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.38 Ω 11 A PG-TO262 P |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon Technologies |
SIPMOS Power-Transistor · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.13 -18.6 V W · · · · A Type SPP18P06P SPB |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP02N60S5 VDS RDS(on) ID 600 V 3 Ω 1.8 A PG-TO220 2 P-TO220-3 |
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Infineon Technologies |
Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 5.9 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Avalanche test • Repetive Avalanche up to Tjmax = 175 °C • dv /dt rated Type SPB80N06S-08 SPI80N06S-08 SPP80N06S-08 Package |
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Infineon Technologies |
SIPMOS Power Transistor |
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Infineon Technologies |
Cool MOS Power Transistor · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 800 9 |
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Infineon Technologies |
SPP03N60C3 / SPD03N60C3 / SPA03N60C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated www.DataSheet4U.com • Extreme P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 dv/dt rated 1 P-TO220-3-31 2 3 • High peak current capability • Improved transcondu |
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Infineon Technologies |
Power Transistor LQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 60'YHUVLRQGHYLFHRQ3&% #PLQIRRWSULQW #F |
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Infineon Technologies |
Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 3.9 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operat |
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Infineon Technologies |
Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 75 7.1 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N08S2-07 SPB80N08S2-07 SPI80N08S2-0 |
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Infineon Technologies AG |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N10 SPI47N10 Package |
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Infineon Technologies |
SIPMOS Power Transistor |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP24N60C3 VDS @ Tjmax 650 V RDS |
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Infineon Technologies |
Power Transistor · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO |
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Infineon Technologies |
SPP17N80C2 · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO |
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Desde 2024. D4U Semiconductor.
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