Busque con el número de pieza junto con el fabricante o la descripción
SPP80N08S2-07 |
Click to view a larger image
| Part Number | SPP80N08S2-07 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo. |
| Features | ge temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDS. |
| Datasheet |
 SPP80N08S2-07 Data Sheet
PDF 460.47KB |
| Distributor | Stock | Price | Buy |
|---|
SPP80N08S2-07 |
| Part Number | SPP80N08S2-07 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | SPP80N08S2-07-VB SPP80N08S2-07-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 7 mΩ 9 mΩ 100 A Single TO-220AB FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • S. |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting www.VBsemi.com D G Top View GD S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPP80N08S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPP80N03 |
Siemens Semiconductor |
SIPMOS Power Transistor |
|
| 3 | SPP80N03L |
Siemens Semiconductor |
Power Transistor |
|
| 4 | SPP80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 5 | SPP80N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 6 | SPP80N03S2L-04 |
Infineon Technologies |
Power-Transistor |
|
| 7 | SPP80N03S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 8 | SPP80N03S2L-06 |
Infineon Technologies |
Power-Transistor |
|
| 9 | SPP80N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 10 | SPP80N04S2-H4 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
|