Infineon Technologies SDT Hoja de datos

No.	parte #	Fabricante	Descripción
1	SDT12S60	Infineon Technologies AG	Silicon Carbide Schottky Diode storage temperature A²s V W °C VRRM VRSM Ptot T j , Tstg Page 1 2002-01-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol m
2	SDT04S60	Infineon Technologies	Silicon Carbide Schottky Diode IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s
3	SDT10S30	Infineon Technologies	Silicon Carbide Schottky Diode =25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature i dt A²s V W °C VRRM VRSM Ptot Tj , Tstg -55... +175 Page 1 2001-12-04 Preliminary data Thermal Characterist
4	SDT10S60	Infineon Technologies	Silicon Carbide Schottky Diode wer dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2004-03-18 SDT10S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - am