SDT10S60 |
Part Number | SDT10S60 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Title | Silicon Carbide Schottky Diode |
Features |
wer dissipation, TC=25°C Operating and storage temperature
A²s V W °C
Rev. 2.0
Page 1
2004-03-18
SDT10S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded RthJC RthJA 2 62 K/W Symbol min. Val... |
Document |
SDT10S60 Data Sheet
PDF 243.12KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SDT10S30 |
Infineon Technologies |
Silicon Carbide Schottky Diode | |
2 | SDT100 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
3 | SDT100 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
4 | SDT100-08 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
5 | SDT100-12 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
6 | SDT100-16 |
HY |
THREE PHASE RECTIFIER BRIDGE |