Infineon Technologies K25 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K25T120	Infineon Technologies	IKW25T120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Di
2	K25N120	Infineon Technologies	Fast IGBT wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C E PG-TO-247-3 VCE 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking K25N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 46 25 Unit V A ICpuls IF 84 84 42 25
3	K25H1203	Infineon Technologies	IGBT " 012 # TZ[V H @ @ 3+ + / , , ? , + \ \ ? , + / D D @ @ \ * * 8 25 2!0" 012 # @ 4!06 <0 > 6 012 # ? @ 4!06 <0 > 6 012 # - 2 3!22 2C 8C016 012 # 012 # %011 %20 %5 1 # %5 "2 "2 ? @ T SV H , @ H @ + \ 3+ D I+ D "+ B ] 0# 2 - 2 3!22 "8%0"65%2