Infineon Technologies IPS Hoja de datos

No.	parte #	Fabricante	Descripción
1	IPS06N03LA	Infineon Technologies AG	OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar
2	IPS65R1K0CE	Infineon Technologies	MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications PCSilverbox,Adapters,LCD&P
3	IPS09N03LA	Infineon Technologies AG	Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar
4	PXB4220	Infineon Technologies AG	members of Infineon ATM Chipset s s s s s Full duplex ATM Packetizer/ Depacketizer for 8 E1/T1 highways Configurable to T1 or E1 mode via external pin 8 T1/E1 ports configurable independently to ATM or AAL Mode ATM Mode: - ATM cell mapping into PDH according to ITU-T G.804 - B
5	IPS12N03LBG	Infineon Technologies	Power-Transistor DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance,
6	IPSH5N03LA	Infineon Technologies	OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead
7	IPSH6N03LB	Infineon Technologies	OptiMOS2 Power-Transistor J-STD20 and JESD22 Rev. 0.3 page 1 2006-05-15 www.DataSheet.in IPUH6N03LB Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area
8	IPSH6N03LAG	Infineon Technologies	Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead
9	IPS65R1K5CE	Infineon Technologies	MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWM
10	HYB25L128160AC	Infineon Technologies AG	128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
11	IPS04N03LA	Infineon Technologies AG	OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summa
12	IPS05N03LA	Infineon Technologies AG	OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar
13	IPS13N03LA	Infineon Technologies AG	OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summa
14	PXB4221	Infineon Technologies AG	members of Infineon ATM Chipset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Applications . . . . . . . . . .
15	IPS10N03LA	Infineon Technologies	OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar
16	IPS06N03LAG	Infineon Technologies	Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead
17	IPSH4N03LAG	Infineon Technologies	OPTIMOS 2 POWER - TRANSISTOR • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead
18	IPSH5N03LAG	Infineon Technologies	OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead
19	IPSH4N03LA	Infineon Technologies	OPTIMOS 2 POWER - TRANSISTOR • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead
20	IPS050N03L	Infineon Technologies	Fast switching MOSFET • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanch