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IPS12N03LBG |
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| Part Number | IPS12N03LBG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gat... |
| Features |
DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A
Rev. 1.5
page 1
2006-05-15
IPD12N03LB G IPU12N03LB G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB
www.DataSheet4U.com
IPS12N03LB G IPF12N03LB G
Unit max.
Values typ.
R thJC R thJA minimal footprint 6 cm2 cooling area5)
-
-
2.9 75 50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate volt... |
| Document |
 IPS12N03LBG Data Sheet
PDF 455.90KB |
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