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Infineon Technologies AG |
IGBT l Values E 55 / 150 / 56 BUP 212 Unit - RthJC ≤1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4. |
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Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet 1 Thermal Resistance Thermal resistance, junction - case Diode thermal resistance, chip case Symbol Values BUP 311D Unit °C - Tj Tstg - -55 ... + 150 -55 ... + 150 55 / 150 / 56 RthJC RthJCD ≤1 ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 |
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Desde 2024. D4U Semiconductor.
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