BUP311D |
Part Number | BUP311D |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | Infineon IGBT With Antiparallel Diode BUP 311D Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former De... |
Features |
1 Thermal Resistance Thermal resistance, junction - case Diode thermal resistance, chip case Symbol Values
BUP 311D
Unit °C -
Tj Tstg
-
-55 ... + 150 -55 ... + 150 55 / 150 / 56
RthJC RthJCD
≤1 ≤ 2.5
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 -
V
VGE = VCE, IC = 0.3 mA, Tj = 25 °C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 8 A, Tj = 25 °C VGE = 15 V, IC = 8 A, Tj = 125 °C VGE = 15 V, IC = 16 A, Tj =... |
Document |
BUP311D Data Sheet
PDF 71.00KB |
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