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Infineon Technologies AG |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N10 SPI47N10 Package |
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Infineon Technologies AG |
SPP11N60S5 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.38 Ω 11 A PG-TO262 P |
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Infineon Technologies AG |
OptiMOS Power-Transistor • N-channel • Enhancement mode • Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Avalanche rated • dv /dt rated P-TO262-3-1 Product Summary V DS R DS(on),max ID 30 12.9 42 V |
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Infineon Technologies AG |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 26 47 P-TO220-3-1 V m A Type SPP47N10L SPB47N10L SP |
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Infineon Technologies AG |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 12 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP77N06S2-12 SPB77N06S2-12 Package P- TO220 -3-1 P- TO263 -3-2 Order |
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Desde 2024. D4U Semiconductor.
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