11N60S5 |
Part Number | 11N60S5 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr... |
Features |
1
2009-11-30
SPP11N60S5 SPI11N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise sp... |
Document |
11N60S5 Data Sheet
PDF 472.18KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | 11N60C2 |
Infineon |
Power Transistor | |
3 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
4 | 11N60E |
Fuji Electric |
FMV11N60E | |
5 | 11N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 11N60M6 |
STMicroelectronics |
N-channel Power MOSFET |