No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Infineon Technologies AG |
MOSFET • N-Channel Product Summary VDS RDS(on) ID 30 4.2 100 P-TO252-5-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/ |
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID 30 5.9 50 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt ra |
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 10.4 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche |
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C ope |
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 6.8 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche |
|
|
|
Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
|
|
|
Infineon Technologies |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
|
|
|
Infineon Technologies AG |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 |
|
|
|
Infineon Technologies |
IPDH6N03LAG • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) ID 30 8.9 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • |
|
|
|
Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature IPD09N03LA IPF |
|
|
|
Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C ope |
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • |
|
|
|
Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche r |
|
|
|
Infineon Technologies |
OPTIMOS 2 POWER - TRANSISTOR • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
|