IPD09N03L |
Part Number | IPD09N03L |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
EC 68-1
Page 1
2002-01-17
IPD09N03L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 1 max. 1.5 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V D... |
Document |
IPD09N03L Data Sheet
PDF 135.70KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPD09N03LA |
Infineon Technologies AG |
Power Transistor | |
2 | IPD09N03LAG |
Infineon |
Power Transistor | |
3 | IPD090N03L |
INCHANGE |
N-Channel MOSFET | |
4 | IPD090N03L |
Infineon |
MOSFET | |
5 | IPD090N03LG |
Infineon |
MOSFET | |
6 | IPD090N03LGE8177 |
Infineon |
MOSFET |