Infineon Technologies AG HYB Hoja de datos

No.	parte #	Fabricante	Descripción
1	HYB25D256400BT	Infineon Technologies AG	256-Mbit Double Data Rate SDRAM CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (
2	HYB18T1G160AF	Infineon Technologies AG	1 Gbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60
3	HYB18T256800AC	Infineon Technologies AG	DDR2 Registered DIMM Modules serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. INFINEON Technologies [email protected]
4	HYB18T1G400AF	Infineon Technologies AG	1 Gbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60
5	HYB18T256160A	Infineon Technologies AG	256 Mbi t DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 256Mb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency Data Rate CAS Latency (CL) tRCD tRP tRAS tRC 3-3-3 200 400 3 15 15 40 55 4-4-4
6	HYB18T512160A	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7	HYB18T512400AC-5	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8	HYB18T512400AC5	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9	HYB18T512400AF-5	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10	HYB25L256160AC	Infineon Technologies AG	256-Mbit Mobile-RAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11	HYB18T256324F-16	Infineon Technologies AG	256-Mbit GDDR3 DRAM [600MHz] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12	HYB18T256324F-20	Infineon Technologies AG	256-Mbit GDDR3 DRAM [600MHz] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13	HYB18T256160AF	Infineon Technologies AG	256 Mbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 www.DataSheet4U.com 256Mb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency Data Rate CAS Latency (CL) tRCD tRP tRAS tRC 3-3-3 200 400
14	HYB18T256800AF	Infineon Technologies AG	256 Mbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 www.DataSheet4U.com 256Mb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency Data Rate CAS Latency (CL) tRCD tRP tRAS tRC 3-3-3 200 400
15	HYB18RL25616AC	Infineon Technologies AG	256 Mbit DDR Reduced Latency DRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Ball Configuration Package and Ballout . . . . . . . . .
16	HYB18RL25632AC	Infineon Technologies AG	256 Mbit DDR Reduced Latency DRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Ball Configuration Package and Ballout . . . . . . . . .
17	HYB18T1G800AF	Infineon Technologies AG	1 Gbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60
18	HYB18T256400AC	Infineon Technologies AG	DDR2 Registered DIMM Modules serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. INFINEON Technologies [email protected]
19	HYB18T256400AF	Infineon Technologies AG	256 Mbi t DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 256Mb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency Data Rate CAS Latency (CL) tRCD tRP tRAS tRC 3-3-3 200 400 3 15 15 40 55 4-4-4
20	HYB18T512400AC	Infineon Technologies AG	DDR2 Registered Memory Modules serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. 2 Rev. 0.85, 2004-04 HYS72T[256/128/64][0/2][0/