Infineon Technologies AG BF1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BF1005R	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0
2	BF1005W	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode 05W Symbol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source bre
3	BF1005	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0
4	BF1005S	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode nnel - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S
5	BF1005SR	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode nnel - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S
6	BF1005SW	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode bol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown
7	BF1009S	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode ctrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 G
8	BF1009SR	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode ctrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 G