BF1005W |
Part Number | BF1005W |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BF1005... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC G... |
Features |
05W Symbol
Rthchs ≤ 370 ≤ 280
Value
Unit K/W
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 0 , VG2S = 6 V Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, I D = 100 µA
1For calculation of R thJA ple... |
Document |
BF1005W Data Sheet
PDF 252.08KB |
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