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Infineon |
SPB21N50C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.19 21 PG-TO263 V Ω A Type SPB21N50C3 |
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Infineon |
Power MOSFET |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 • |
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Infineon Technologies |
Power Transistor P5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH)XOO3$. 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 7KH |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 2.7 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C opera |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 75 6.5 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6045 Q6 |
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Infineon Technologies |
Cool MOS Power Transistor • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 8.4 73 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 3.9 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operat |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 40 3.1 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N04S2L-03 SPB80N04S2L-03 Package P |
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Infineon Technologies |
Power Transistor Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A · 175°C operating temperature ° Pb-free lead p |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 8.4 73 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature |
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Infineon Technologies AG |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 12 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP77N06S2-12 SPB77N06S2-12 Package P- TO220 -3-1 P- TO263 -3-2 Order |
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Infineon |
SIPMOS Power-Transistor • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SP |
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Infineon |
Power MOSFET on. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) ID 75V 0.0078 100A D D S G D2 Pak IRF1407SPbF S GD TO-262 Pak IRF1407LPbF G Gate D Drain S Source Base part number IRF1 |
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Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.95 4.5 P-TO220-3- |
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Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 0.95 4.5 V Ω A P-TO220- |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.95 4.5 P-TO220-3- |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance SPB07N60C3 VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A PG-TO263 Type SP |
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Desde 2024. D4U Semiconductor.
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