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SPB11N60C3 |
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| Part Number | SPB11N60C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate char... |
| Features |
anche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
Page 1
2003-07-01
Final data Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ... |
| Document |
 SPB11N60C3 Data Sheet
PDF 352.75KB |
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Desde 2024. D4U Semiconductor.
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