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Infineon |
Small Signal Transistor • N-channel • Enhancement mode • Logic level • Avalanche rated • fast switching • Pb-free lead-plating; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002 Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3Ω 4 0.3 A PG-SOT |
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Infineon Technologies AG |
Quad Driver Incl. Short-Circuit Signaling q q q Short-circuit signaling Four driver circuits for driving power transistors Turn-ON threshold setting from 1.5 to 7 V P-DSO-20-7 Type FZL 4146 G General Description Ordering Code Q67000-H8743 Package P-DSO-20-7 (SMD) The IC comprises four |
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INFINEON |
SIPMOS Small-Signal Transistor • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS119 Package SOT23 Ordering Code Q67000-S007 Tape and Reel Information |
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Infineon |
SiGe Bipolar 3G/3.5G/4G Single-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
IGBT • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling SIGC05T60SNC This chip is used for: • DuoPack SGP04N60 Applications: • drives C G E Chip Type SIGC05T60SNC VCE ICn 600V 4A Die Siz |
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Infineon |
Small-Signal Transistor • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID BSS138W 60 V 3.5 Ω 0.28 A PG-SOT-32 |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 67 -4.7 P-TSOP6-6 V mΩ A 4 5 6 3 2 1 Type BSL211SP Package P-TSOP6-6 Ordering Cod |
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Infineon Technologies AG |
SIPMOS Small-Signal Transistor K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- sour |
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Infineon |
Small-Signal-Transistor • N-channel • Enhancement mode • Logic Level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSP716N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V |
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Infineon Technologies |
Signal Processing Subscriver Line Interface Codec Filter |
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Infineon Technologies |
IGBT • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete components Applications: • drives • white goods |
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Infineon Technologies |
IGBT • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC101T170R3 VCE 1700V IC |
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Infineon Technologies |
IGBT • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • chip only Applications: • drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10.12 x 10.18 |
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Infineon Technologies |
IGBT • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code |
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Infineon Technologies |
IGBT • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC42T |
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Infineon Technologies |
IGBT • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Modules Applications: • drives G E Chip Type SIGC42T60NC VCE 600V ICn 50A Die Size 6.5 x 6.5 mm2 Package sawn on foil O |
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Infineon |
Small-Signal-Transistor Product Summary · Dual N- and P -Channel Drain source voltage · Enhancement mode Drain-Source on-state · Logic Level resistance · Avalanche rated Continuous drain current · Pb-free lead plating; RoHS compliant VDS RDS(on) ID N 60 0.11 3.1 |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 BSL302SN Product Summary VDS RDS(on),max |
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Infineon Technologies |
Small-Signal-Transistor • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002DW Product Summary VDS RDS(on),max ID VGS=10 V |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID VGS=2.5 V VGS=1.8 V |
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Desde 2024. D4U Semiconductor.
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