| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon |
IPB60R165CP • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
|
|
|
|
Infineon |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
|
|
|
|
Infineon |
Power-Transistor H3 >3 @5: 7 7@7D9K E;@9>7 BG>E7 # 8J $ < ' ?J " - 7H7DE7 6;A 67 6/ (R. # 3 F7 EA GD57 HA >F3 97,# R/ (R. ) ?J $ < ) |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-H5 IPP80N06S2L-H5 Product Su |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Product Summary V DS |
|
|
|
|
Infineon Technologies |
Power-Transistor Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[# Q F2 =2 ? 496 D6CD65 Q) 3 7B66 A=2 D:? 8 |
|
|
|
|
Infineon |
Power Transistor Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[# Q F2 =2 ? 496 D6CD65 Q) 3 7B66 A=2 D:? 8 + |
|
|
|
|
Infineon |
MOSFET •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Prod |
|
|
|
|
Infineon Technologies |
Power Transistor # ) E< C 54 4B 19 > 3 EB B 5>D $ 9$\aX_Q # 6H ) =H % `[` ( V ( _`S ( 8 T $ 9 ' =H " F 1< 1>3 85 5>5B 7I C 9 >7< 5 @E< C 5+# !1D 5C ? EB 35F ?< D 175 ) ? G5B 49 C C 9 @1D 9 ?> ( @5B 1D 9 >7 1>4 C D ?B 175 D 5=@5B 1D EB 5 # |
|
|
|
|
Infineon Technologies |
Power Transistor • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),ma |
|
|
|
|
Infineon Technologies |
OptiMOS-P2 Power-Transistor • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection PG-TO263-3-2 PG-TO262-3-1 PG- |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-H5 IPP80N06S2-H5 Product Summary V DS R D |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 Product Summary V DS |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Product Summary V DS R DS(on),max (SMD v |
|
|
|
|
Infineon |
IPB90R340C3 • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for industrial applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary VDS @ TJ=25°C RDS(on), |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Product Summary V DS R D |
|
|
|
|
Infineon |
MOSFET •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1) |
|
|
|
|
Infineon |
MOSFET • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product valida |
|
Desde 2024. D4U Semiconductor.
|