| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon Technologies |
MOSFET •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications Applications LEDL |
|
|
|
|
Infineon |
MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications •Widedistanceof4.25mmbetweentheleads |
|
|
|
|
Infineon |
MOSFET < 0V 2C ?& + & Z % < 2C' /& & 1 8 &8 E& I 8 = &8 - 1 = 1 8 &8 8 98 ;' ? ( 8 &8 =& & 1- 8 " ! 0 0 KLMNOP 3Q 3QR 0 QR 8 98 S ; WXW WXW K OWY :: 0 0 KLMNOP 8 98 8 ]98 # $% !! ; 2 J G :H/ $ J G H/ 2 J G :H/ .4: 6 0 G 2 G : ; 6 0 G 2 G: 2 : |
|
|
|
|
Infineon Technologies |
MOSFET •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications Applications LEDL |
|
|
|
|
Infineon |
MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
|
|
|
|
Infineon Technologies |
MOSFET • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
|
|
|
|
Infineon |
Power Transistor ( >&ch_fX , =[! ' ;M ( > - >>4 ' ;L ( > - >>4 ( ;L ;1 )W0 - AM - >M 4 fgTg\V != &Q ) gbg , =[! , ] , fgZ + J:I |
|
|
|
|
Infineon |
Power-Transistor •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApp |
|
|
|
|
Infineon Technologies |
Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching |
|
|
|
|
Infineon |
MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWM |
|
|
|
|
Infineon Technologies |
IPA60R190E6 • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and re |
|
|
|
|
Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, halogen free (excluding TO-252) Applications PFC stages, hard switching PWM stages and resonant |
|
|
|
|
Infineon |
MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
|
|
|
|
Infineon |
MOSFET •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowe |
|
|
|
|
Infineon |
MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWM |
|
|
|
|
Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApp |
|
|
|
|
Infineon |
Power-Transistor •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductsco |
|
|
|
|
Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio |
|
|
|
|
Infineon |
MOSFET |
|
|
|
|
Infineon |
MOSFET •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package Benefits •Increasedeco |
|
Desde 2024. D4U Semiconductor.
|