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IPA086N10N3G |
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| Part Number | IPA086N10N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 ... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA086N10N3 G 100 V 8.6 mW 45 A Package Marking PG-TO220-FP 086N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions C... |
| Document |
 IPA086N10N3G Data Sheet
PDF 523.96KB |
Similar Datasheet
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