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Infineon G50 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
G50T60

Infineon Technologies
IGBT

 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for : - Frequency Converters - Uninterrupted Power Supply
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very
Datasheet
2
G50N60HS

Infineon
High Speed IGBT
e-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.)
Datasheet
3
G50H603

Infineon Technologies
IGW50N60H3
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•complete
Datasheet



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