G50N60HS |
Part Number | G50N60HS |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT... |
Features |
e-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
2)
ICpul s EAS
150 150 280 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
±20 ±30 10 416 -55...+150 175 260
V µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 June 06
Power Semiconductors
SGW50N60HS
www.DataSheet4U.com
Thermal... |
Document |
G50N60HS Data Sheet
PDF 345.79KB |
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