Infineon FP4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FP40R12KE3G	Infineon	IGBT • LowSwitchingLosses • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • HighPowerandThermalCyclingCapability • IntegratedNTCtemperaturesensor • CopperBasePlate • SolderContactTechnology • StandardHousing ModuleLabe
2	BFP420	Infineon	Surface mount wideband silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC J
3	FP40R12KE3	Infineon	IGBT Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,50 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz
4	FP40R12KT3	Infineon	IGBT VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25
5	BFP450	Infineon	Surface mount high linearity wideband silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 1.7 dB at 1.9 GHz, 3 V, 50 mA • High gain Gma = 15.5 dB at 1.9 GHz, 3 V, 90 mA • OIP3 = 31 dBm at 1.9 GHz, 3 V, 90 mA Product validation Qualified for industrial applications according to the relevant tests of JEDE
6	FP40R12KT3G	Infineon	IGBT VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 2
7	BFP405	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor V mA mW °C 1 2013-09-19 BFP405 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 530 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC
8	BFP405F	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor r Junction - soldering point1) Symbol RthJS Value 4.5 4.1 15 15 1.5 25 3 75 150 -55 ... 150 Value 500 Unit V mA mW °C Unit K/W 1 2013-09-19 BFP405F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values
9	BFP420F	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10	BFP460	Infineon Technologies AG	Low Noise Silicon Bipolar RF Transistor tor lead at the soldering point to the pcb Value 4.5 4.2 15 15 1.5 70 7 230 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 2013-09-13 1 BFP460 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 250 Unit K/W Electrical
11	AUIRFP4568	Infineon	Power MOSFET  Advanced Planar Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) typ. max. ID
12	BFP410	Infineon	Low Noise Silicon Bipolar RF Transistor 50 -55 ... 150 Unit V mA mW °C 1 2013-08-16 BFP410 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 335 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit
13	IRFP4768PbF	Infineon	MOSFET
14	AUIRFP4310Z	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically des
15	BGC405	Infineon Technologies	Self-Biased BFP405 and Vr. DataSheet4U.com High Frequency Products DataSheet 4 U .com 1 Edition A13, 06/00 www.DataSheet4U.com BGC405 Maximum Ratings Parameter Device current Device voltage Total power dissipation, Ts ≤ Control voltage Input Current for pin 1 J
16	BGC420	Infineon Technologies	Self-Biased BFP420 and Vr. DataSheet4U.com High Frequency Products DataSheet 4 U .com 1 Edition A13, 05/99 www.DataSheet4U.com BGC420 Maximum Ratings Parameter Device current Device voltage Total power dissipation, Ts ≤ Control voltage Input Current for pin 1 J
17	IRFP4868PbF	Infineon	Power MOSFET or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Symbol Parameter RJC RCS RJA Junction-to-Case  Case-to-Sink, Fla